IXFQ22N60P3
- Mfr.Part #
- IXFQ22N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO3P
- Stock
- 285
- In Stock :
- 285
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Power Dissipation (Max) :
- 500W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Series :
- HiPerFET™, Polar3™
- Reach Compliance Code :
- Unknown
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 600 V
- Drain-source On Resistance-Max :
- 0.36 Ω
- Fall Time (Typ) :
- 19 ns
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Rise Time :
- 17ns
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 28 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 22 A
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Number of Pins :
- 3
- Factory Lead Time :
- 26 Weeks
- Power Dissipation-Max :
- 500W Tc
- Drain to Source Breakdown Voltage :
- 600V
- Width :
- 4.9mm
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Polarity :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Length :
- 15.8mm
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Tradename :
- HiPerFET
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Product Status :
- Active
- Published :
- 2011
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 11A, 10V
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 500W
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 55A
- Supplier Device Package :
- TO-3P
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Height :
- 20.3mm
- Base Product Number :
- IXFQ22
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 500 W
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Continuous Drain Current (ID) :
- 22A
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 54 ns
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 600V
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFQ22N60P3

N-Channel Tube 360m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-3P-3, SC-65-3
IXFQ22N60P3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 22 A.When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 55A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFQ22N60P3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 55A.
a 600V drain to source voltage (Vdss)
IXFQ22N60P3 Applications
There are a lot of IXYS
IXFQ22N60P3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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