IXFQ22N60P3

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Mfr.Part #
IXFQ22N60P3
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO3P
Stock
285
In Stock :
285

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Packaging :
Tube
Transistor Element Material :
SILICON
Pin Count :
3
Power Dissipation (Max) :
500W (Tc)
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Number of Elements :
1
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Brand :
IXYS
Series :
HiPerFET™, Polar3™
Reach Compliance Code :
Unknown
Mounting Style :
Through Hole
DS Breakdown Voltage-Min :
600 V
Drain-source On Resistance-Max :
0.36 Ω
Fall Time (Typ) :
19 ns
Minimum Operating Temperature :
- 55 C
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Transistor Type :
1 N-Channel
Element Configuration :
Single
Rise Time :
17ns
Gate to Source Voltage (Vgs) :
30V
Turn On Delay Time :
28 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Package :
Tube
Drain Current-Max (Abs) (ID) :
22 A
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Number of Pins :
3
Factory Lead Time :
26 Weeks
Power Dissipation-Max :
500W Tc
Drain to Source Breakdown Voltage :
600V
Width :
4.9mm
Package / Case :
TO-3P-3, SC-65-3
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Length :
15.8mm
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Transistor Application :
SWITCHING
FET Type :
N-Channel
Tradename :
HiPerFET
Vgs (Max) :
±30V
Mount :
Through Hole
Avalanche Energy Rating (Eas) :
400 mJ
Product Status :
Active
Published :
2011
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
360m Ω @ 11A, 10V
Qualification Status :
Not Qualified
Power Dissipation :
500W
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
55A
Supplier Device Package :
TO-3P
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Height :
20.3mm
Base Product Number :
IXFQ22
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
500 W
Channel Mode :
Enhancement
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Continuous Drain Current (ID) :
22A
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
54 ns
FET Feature :
--
Drain to Source Voltage (Vdss) :
600V
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Datasheets
IXFQ22N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFQ22N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFQ22N60P3 pinout, IXFQ22N60P3 datasheet PDF, IXFQ22N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFQ22N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFQ22N60P3


N-Channel Tube 360m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-3P-3, SC-65-3

IXFQ22N60P3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 22 A.When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 55A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFQ22N60P3 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 55A.
a 600V drain to source voltage (Vdss)


IXFQ22N60P3 Applications


There are a lot of IXYS
IXFQ22N60P3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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