IXFQ24N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Published :

2011

Power Dissipation (Max) :

480W (Tc)

Base Product Number :

IXFQ24

Avalanche Energy Rating (Eas) :

750 mJ

Drain to Source Voltage (Vdss) :

500V

Supplier Device Package :

TO-3P

Number of Terminations :

3

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 25V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Mount :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS Corporation

Drain-source On Resistance-Max :

0.27Ohm

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

270m Ω @ 500mA, 10V

Pin Count :

3

FET Type :

N-Channel

Packaging :

Tube

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

480 W

DS Breakdown Voltage-Min :

500V

Number of Terminals :

3

Power Dissipation-Max :

480W Tc

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

24 A

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Qualification Status :

Not Qualified

Package / Case :

TO-3P-3, SC-65-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Pbfree Code :

yes

Continuous Drain Current (ID) :

24A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Polarity/Channel Type :

N-Channel

Package :

Tube

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Factory Lead Time :

24 Weeks

Surface Mount :

No

Series :

HiPerFET™, PolarP2™

Pulsed Drain Current-Max (IDM) :

50A

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Pure Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED