IS65WV25616BLL-70TLA3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Standby Current-Max :

0.00006A

Address Bus Width :

18b

Supply Voltage-Max (Vsup) :

3.6V

Sync/Async :

ASYNCHRONOUS

Supply Voltage :

3V

Output Characteristics :

3-STATE

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Functions :

1

Number of Terminations :

44

Voltage - Supply :

2.5V~3.6V

JESD-609 Code :

e3

Memory Type :

Volatile

Memory Size :

4Mb 256K x 16

Mounting Type :

Surface Mount

Memory Format :

SRAM

Write Cycle Time - Word, Page :

70ns

Memory Width :

16

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

260

Terminal Pitch :

0.8mm

Density :

4 Mb

Pin Count :

44

Access Time (Max) :

70 ns

Radiation Hardening :

No

Operating Temperature :

-40°C~125°C TA

Nominal Supply Current :

40mA

I/O Type :

COMMON

Packaging :

Tray

Terminal Position :

Dual

Word Size :

16b

Time@Peak Reflow Temperature-Max (s) :

40

Number of Ports :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Pins :

44

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Pbfree Code :

yes

Supply Voltage-Min (Vsup) :

2.5V

Operating Supply Voltage :

3.3V