IS65WV102416BLL-25MA3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~125°C TA

Organization :

1MX16

Write Cycle Time - Word, Page :

25ns

Reach Compliance Code :

Compliant

I/O Type :

COMMON

Number of Terminations :

48

Length :

11mm

Pbfree Code :

No

Memory Type :

Volatile

Pin Count :

48

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Supply Voltage-Min (Vsup) :

2.4V

Memory Interface :

Parallel

Supply Voltage :

3.3V

JESD-30 Code :

R-PBGA-B48

Memory Format :

SRAM

Output Characteristics :

3-STATE

Packaging :

Tray

Terminal Position :

BOTTOM

Memory Width :

16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e0

Screening Level :

AEC-Q100

Number of Functions :

1

Voltage - Supply :

2.4V~3.6V

Power Supplies :

2.5/3.3V

HTS Code :

8542.32.00.41

Memory Density :

16777216 bit

Standby Current-Max :

0.002A

Access Time (Max) :

25 ns

Standby Voltage-Min :

2.4V

Supply Voltage-Max (Vsup) :

3.6V

Package / Case :

48-TFBGA

Supply Current-Max :

0.06mA

Surface Mount :

yes

Width :

9mm

Mounting Type :

Surface Mount

ECCN Code :

3A991.B.2.A

Terminal Pitch :

0.75mm

Memory Size :

16Mb 1M x 16

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height Seated (Max) :

1.2mm

Terminal Finish :

Tin/Lead (Sn/Pb)