IRLZ44ZSPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0135Ohm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

80W Tc

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

51A

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

204A

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Published :

2004

Vgs (Max) :

±16V

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Number of Elements :

1

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

78 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 31A, 10V