IRLZ14L
- Mfr.Part #
- IRLZ14L
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A TO262-3
- Stock
- 380
- In Stock :
- 380
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Rise Time :
- 110ns
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Fall Time (Typ) :
- 26 ns
- Drain to Source Resistance :
- 200mOhm
- Turn On Delay Time :
- 9.3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Height :
- 9.65mm
- Rds On Max :
- 200 mΩ
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±10V
- Width :
- 4.7mm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Turn-Off Delay Time :
- 17 ns
- Input Capacitance :
- 400pF
- Length :
- 10.41mm
- Weight :
- 2.387001g
- Element Configuration :
- Single
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Continuous Drain Current (ID) :
- 10A
- Gate to Source Voltage (Vgs) :
- 10V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 6A, 5V
- Drain to Source Breakdown Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Supplier Device Package :
- TO-262-3
- Published :
- 2016
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging :
- Tube
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IRLZ14L
N-Channel Tube 200mOhm @ 6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-262-3 Long Leads, I2Pak, TO-262AA
IRLZ14L Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 17 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 200mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 5V).
IRLZ14L Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLZ14L Applications
There are a lot of Vishay Siliconix
IRLZ14L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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