IRLZ14SPBF
- Mfr.Part #
- IRLZ14SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A D2PAK
- Stock
- 7,729
- In Stock :
- 7,729
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Packaging :
- Tube
- Published :
- 2014
- Rise Time :
- 110ns
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 17 ns
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 10V
- Resistance :
- 200mOhm
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 26 ns
- Mount :
- Surface Mount
- Vgs (Max) :
- ±10V
- Recovery Time :
- 130 ns
- Number of Elements :
- 1
- Weight :
- 1.437803g
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 200 mΩ
- Input Capacitance :
- 400pF
- Drain to Source Voltage (Vdss) :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Turn On Delay Time :
- 9.3 ns
- Lead Free :
- Lead Free
- Width :
- 9.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Length :
- 10.41mm
- Drain to Source Resistance :
- 200mOhm
- Power Dissipation :
- 3.7W
- Supplier Device Package :
- D2PAK
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Height :
- 4.83mm
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 6A, 5V
- Number of Channels :
- 1
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 10A
- Datasheets
- IRLZ14SPBF
N-Channel Tube 200mOhm @ 6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ14SPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 17 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLZ14SPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLZ14SPBF Applications
There are a lot of Vishay Siliconix
IRLZ14SPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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