IRLZ24NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

2 V

Current Rating :

17A

Fall Time (Typ) :

29 ns

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

16V

Rise Time :

74ns

Drain to Source Breakdown Voltage :

55V

Dual Supply Voltage :

55V

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

250

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Published :

2002

Pulsed Drain Current-Max (IDM) :

72A

Width :

4.69mm

REACH SVHC :

No SVHC

Voltage - Rated DC :

55V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Packaging :

Tube

Power Dissipation :

45W

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Lead Pitch :

2.54mm

Continuous Drain Current (ID) :

18A

Number of Terminations :

3

JESD-609 Code :

e3

Turn On Delay Time :

7.1 ns

Number of Pins :

3

Threshold Voltage :

2V

FET Type :

N-Channel

Length :

10.5156mm

Power Dissipation-Max :

45W Tc

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Recovery Time :

90 ns

Mount :

PCB, Through Hole

Vgs (Max) :

±16V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Resistance :

60mOhm

Lead Free :

Contains Lead, Lead Free

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

68 mJ

Height :

15.24mm

Package / Case :

TO-220-3

Turn-Off Delay Time :

20 ns

Transistor Element Material :

SILICON