IRLZ44ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

78 mJ

Power Dissipation-Max :

80W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 31A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

51A

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Published :

2004

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0135Ohm

Pulsed Drain Current-Max (IDM) :

204A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Drain to Source Voltage (Vdss) :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

DS Breakdown Voltage-Min :

55V