IRLZ44NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

26 ns

Height :

4.826mm

Current Rating :

47A

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

47A Tc

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

1997

Series :

HEXFET®

Resistance :

22mOhm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Number of Elements :

1

Fall Time (Typ) :

15 ns

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

55V

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Dual Supply Voltage :

55V

Length :

10.668mm

Recovery Time :

120 ns

Nominal Vgs :

2 V

Drain to Source Breakdown Voltage :

55V

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Number of Pins :

3

REACH SVHC :

No SVHC

Threshold Voltage :

2V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs (Max) :

±16V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Turn On Delay Time :

11 ns

Transistor Element Material :

SILICON

Element Configuration :

Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

16V

Rise Time :

84ns

Continuous Drain Current (ID) :

47A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Power Dissipation :

110W

Mount :

Surface Mount

Power Dissipation-Max :

3.8W Ta 110W Tc