IRLZ44NSPBF
- Mfr.Part #
- IRLZ44NSPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 47A D2PAK
- Stock
- 13,817
- In Stock :
- 13,817
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 16 Weeks
- Drain to Source Voltage (Vdss) :
- 55V
- HTS Code :
- 8541.29.00.95
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Pulsed Drain Current-Max (IDM) :
- 160A
- Drain Current-Max (Abs) (ID) :
- 47A
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Series :
- HEXFET®
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.025Ohm
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
- Vgs (Max) :
- ±16V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Surface Mount :
- yes
- Power Dissipation-Max :
- 3.8W Ta 110W Tc
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Published :
- 1998
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 5V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 25A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Datasheets
- IRLZ44NSPBF

N-Channel Tube 22m Ω @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ44NSPBF Description
The IRLZ44NSPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRLZ44NSPBF Features
-
Logic level gate drive
-
Advanced process technology
-
Fast switching
-
Fully avalanche rating
-
Low static drain-to-source ON-resistance
-
Dynamic dV/dt rating
IRLZ44NSPBF Applications
-
Induction furnaces
-
Arc furnaces and arc welders
-
Steel rolling mills
-
Large motors with periodic loading
-
Thyristor drives
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