IRLZ34NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Single

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.046Ohm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Drain Current-Max (Abs) (ID) :

30A

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

2

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

110A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Type :

N-Channel

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Power Dissipation-Max :

3.8W Ta 68W Tc

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

55V

Avalanche Energy Rating (Eas) :

110 mJ