IRLZ34NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Turn-Off Delay Time :

21 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Through Hole

Supplier Device Package :

TO-262

Continuous Drain Current (ID) :

30A

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

9.65mm

Power Dissipation :

68W

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

35mOhm @ 16A, 10V

Mount :

Through Hole

Turn On Delay Time :

8.9 ns

Input Capacitance :

880pF

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Rds On Max :

35 mΩ

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Resistance :

35mOhm

Length :

10.668mm

Published :

1997

Gate to Source Voltage (Vgs) :

16V

Packaging :

Tube

Drain to Source Breakdown Voltage :

55V

Fall Time (Typ) :

29 ns

Voltage - Rated DC :

55V

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Width :

4.826mm

Drain to Source Resistance :

60mOhm

Power Dissipation-Max :

3.8W Ta 68W Tc

Current Rating :

30A

Rise Time :

100ns

FET Type :

N-Channel