IRLZ24NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

Mounting Type :

Surface Mount

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

55V

Number of Terminations :

2

Surface Mount :

yes

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

18A

Terminal Finish :

MATTE TIN OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 45W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Elements :

1

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Published :

1998

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Pulsed Drain Current-Max (IDM) :

72A

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.075Ohm

DS Breakdown Voltage-Min :

55V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

68 mJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE