IRLZ24NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

90 ns

Vgs (Max) :

±16V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Number of Pins :

3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Turn On Delay Time :

7.1 ns

Turn-Off Delay Time :

20 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Dual Supply Voltage :

55V

Published :

1996

Width :

9.65mm

Power Dissipation :

45W

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.8W Ta 45W Tc

Current Rating :

17A

Resistance :

60mOhm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

68 mJ

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

72A

Continuous Drain Current (ID) :

18A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Reverse Recovery Time :

60 ns

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Gate to Source Voltage (Vgs) :

16V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Case Connection :

DRAIN

Element Configuration :

Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Rise Time :

74ns

Fall Time (Typ) :

29 ns

REACH SVHC :

No SVHC

Height :

4.699mm

Voltage - Rated DC :

55V

Lead Free :

Contains Lead, Lead Free

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Number of Terminations :

2

FET Type :

N-Channel

Nominal Vgs :

2 V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Length :

10.668mm

Vgs(th) (Max) @ Id :

2V @ 250μA