IRLZ24NSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

55V

Nominal Vgs :

2 V

JESD-609 Code :

e3

Number of Terminations :

2

Number of Elements :

1

Avalanche Energy Rating (Eas) :

68 mJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

16V

Drain to Source Breakdown Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

7.1 ns

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Resistance :

60mOhm

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

20 ns

Continuous Drain Current (ID) :

18A

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.699mm

Published :

1996

Packaging :

Tape and Reel (TR)

Current Rating :

17A

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Case Connection :

DRAIN

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

74ns

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Pulsed Drain Current-Max (IDM) :

72A

Series :

HEXFET®

Reverse Recovery Time :

60 ns

Transistor Application :

SWITCHING

Power Dissipation :

45W

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

29 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.8W Ta 45W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voltage - Rated DC :

55V

Length :

10.668mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Lead Free :

Contains Lead, Lead Free

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Number of Pins :

3

Vgs (Max) :

±16V

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

2V @ 250μA

Recovery Time :

90 ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

ECCN Code :

EAR99