IRLZ24NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Series :

HEXFET®

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

18A

Published :

1998

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

72A

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Vgs (Max) :

±16V

Drain-source On Resistance-Max :

0.075Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Power Dissipation-Max :

3.8W Ta 45W Tc

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

55V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

68 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1