IRLR7833TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4010pF @ 15V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Drain-source On Resistance-Max :

0.0045ohm

Terminal Position :

Single

DS Breakdown Voltage-Min :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

30A

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

140W Tc

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

530 mJ

Transistor Application :

SWITCHING

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

560A

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

140A Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 15A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)