IRLR3105PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rise Time :

57ns

FET Type :

N-Channel

Current Rating :

25A

REACH SVHC :

No SVHC

Power Dissipation :

57W

Threshold Voltage :

3V

Turn-Off Delay Time :

25 ns

Continuous Drain Current (ID) :

25A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Published :

2008

Power Dissipation-Max :

57W Tc

Voltage - Rated DC :

55V

Length :

6.73mm

JESD-609 Code :

e3

Resistance :

37mOhm

Fall Time (Typ) :

37 ns

Series :

HEXFET®

Number of Elements :

1

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

37m Ω @ 15A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tube

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Dual Supply Voltage :

55V

Width :

6.223mm

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

3 V

Turn On Delay Time :

8 ns

Height :

2.39mm

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Drain to Source Breakdown Voltage :

55V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Surface Mount