IRL8113STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Drain-source On Resistance-Max :

0.006Ohm

Avalanche Energy Rating (Eas) :

220 mJ

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

420A

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

110W

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 15V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Number of Terminations :

2

Case Connection :

DRAIN

Published :

2004

ECCN Code :

EAR99

Mount :

Surface Mount

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Turn-Off Delay Time :

18 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 21A, 10V

Fall Time (Typ) :

5 ns

Packaging :

Tape and Reel (TR)

Width :

9.65mm

Lead Free :

Lead Free

Length :

10.668mm

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

38ns

Continuous Drain Current (ID) :

105A

Number of Elements :

1

Turn On Delay Time :

14 ns

Drain Current-Max (Abs) (ID) :

42A

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Height :

4.699mm

Transistor Application :

SWITCHING