IRL8113SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

420A

Power Dissipation-Max :

110W Tc

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

JESD-609 Code :

e3

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Drain Current-Max (Abs) (ID) :

42A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Terminal Form :

Gull wing

Number of Elements :

1

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Rds On (Max) @ Id, Vgs :

6m Ω @ 21A, 10V

Drain-source On Resistance-Max :

0.006Ohm

JESD-30 Code :

R-PSSO-G2

Published :

2004

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Packaging :

Tube

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

220 mJ

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE