IRL8113PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Recovery Time :

27 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

42A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Package / Case :

TO-220-3

Rise Time :

38ns

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Mount :

Through Hole

Radiation Hardening :

No

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Factory Lead Time :

15 Weeks

Height :

8.77mm

Power Dissipation-Max :

110W Tc

Contact Plating :

Tin

Packaging :

Tube

Number of Elements :

1

Dual Supply Voltage :

30V

Published :

2004

Width :

4.69mm

Lead Free :

Contains Lead, Lead Free

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

220 mJ

Voltage - Rated DC :

30V

Case Connection :

DRAIN

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 15V

Threshold Voltage :

2.25V

Continuous Drain Current (ID) :

105A

Length :

10.5156mm

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

5 ns

Turn-Off Delay Time :

18 ns

ECCN Code :

EAR99

Resistance :

6mOhm

Nominal Vgs :

2.25 V

Pulsed Drain Current-Max (IDM) :

420A

Power Dissipation :

110W

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 21A, 10V

Current Rating :

105A

Transistor Element Material :

SILICON