IRL40SC209

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

15270pF @ 25V

Rds On (Max) @ Id, Vgs :

0.8m Ω @ 100A, 10V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

267nC @ 4.5V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Power Dissipation-Max :

375W Tc

JESD-30 Code :

R-PSSO-G6

Drain Current-Max (Abs) (ID) :

300A

Pulsed Drain Current-Max (IDM) :

1200A

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

40V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

1404 mJ

RoHS Status :

ROHS3 Compliant

Series :

StrongIRFET™

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Current - Continuous Drain (Id) @ 25°C :

478A Tc

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0008Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Case Connection :

DRAIN