IRL40B212

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 4.5V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

2.4V

Lead Free :

Lead Free

Turn-Off Delay Time :

88 ns

Length :

10.67mm

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.4V @ 150μA

Height :

16.51mm

FET Type :

N-Channel

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

40V

Turn On Delay Time :

39 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8320pF @ 25V

Mount :

Through Hole

Power Dissipation-Max :

231W Tc

Continuous Drain Current (ID) :

195A

Width :

4.83mm

Published :

2013

Vgs (Max) :

±20V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 100A, 10V

Series :

HEXFET®, StrongIRFET™

Package / Case :

TO-220-3