IRL40S212

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Mfr.Part #
IRL40S212
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 195A D2PAK
Stock
1,550
In Stock :
1,550

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.67mm
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
8320pF @ 25V
Published :
2013
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
137nC @ 4.5V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
1.9m Ω @ 100A, 10V
Vgs (Max) :
±20V
Height :
4.83mm
Turn-Off Delay Time :
88 ns
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
195A Tc
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
231W Tc
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
17 Weeks
ECCN Code :
EAR99
Threshold Voltage :
2.4V
Continuous Drain Current (ID) :
195A
Drain to Source Voltage (Vdss) :
40V
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
REACH SVHC :
Unknown
Vgs(th) (Max) @ Id :
2.4V @ 150μA
Width :
9.65mm
Series :
StrongIRFET™
Turn On Delay Time :
39 ns
Mount :
Surface Mount
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IRL40S212
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRL40S212 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IRL40S212 pinout, IRL40S212 datasheet PDF, IRL40S212 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRL40S212 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRL40S212


N-Channel Tube 1.9m Ω @ 100A, 10V ±20V 8320pF @ 25V 137nC @ 4.5V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL40S212 Description


The IRL40S212 is a second-generation N-channel Power MOSFET based on MDmeshTM technology. This groundbreaking Power MOSFET combines a vertical structure with the company's strip layout to deliver one of the world's lowest on-resistance and gate charge. As a result, it's ideal for high-efficiency converters with the most stringent requirements.



IRL40S212 Features


  • Logic Level Drive (Logic Level Drive) optimized

  • Ruggedness of Gate, Avalanche, and Dynamic dV/dt has been improved.

  • Avalanche SOA and Fully Characterized Capacitance

  • Enhanced dV/dt and dI/dt capability of body diodes

  • Lead-Free 

  • Halogen Free, RoHS Compliant

  • -Free



IRL40S212 Applications


  • Applications for brushed motor drives and BLDC motor drives

  • Circuits that are powered by batteries

  • Topologies of half-bridge and full-bridge

  • Applications for synchronous rectifiers

  • Power supply with a resonant mode

  • OR-ing and redundant power switches are two examples of redundant power switches.

  • -Free DC/DC and AC/DC converters -Free DC/AC Inverters


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