IRFW610BTMFP001

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

9.3 nC @ 10 V

Package :

Bulk

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200 V

Number of Terminals :

2

Drain Current-Max (Abs) (ID) :

3.3 A

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

225 pF @ 25 V

Power Dissipation-Max (Abs) :

38 W

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

1.5 Ω

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

Fairchild Semiconductor Corporation

Supplier Device Package :

D2PAK

DS Breakdown Voltage-Min :

200 V

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

40 mJ

Product Status :

Active

Terminal Form :

Gull wing

Series :

-

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.3A (Tc)

Qualification Status :

Not Qualified

Subcategory :

FET General Purpose Power

Number of Elements :

1

Terminal Position :

Single

Pin Count :

3

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.65A, 10V

Power Dissipation (Max) :

3.13W (Ta), 38W (Tc)

Vgs (Max) :

±30V

JESD-609 Code :

e3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

10 A

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Technology :

METAL-OXIDE SEMICONDUCTOR