IRFW520ATM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

100 V

Current - Continuous Drain (Id) @ 25°C :

9.2A (Tc)

Terminal Finish :

MATTE TIN

JEDEC-95 Code :

TO-263AB

Drain-source On Resistance-Max :

0.2 Ω

Surface Mount :

yes

JESD-609 Code :

e3

FET Feature :

-

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Package :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Pulsed Drain Current-Max (IDM) :

37 A

Technology :

MOSFET (Metal Oxide)

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

480 pF @ 25 V

Transistor Application :

SWITCHING

Terminal Position :

Single

Supplier Device Package :

D2PAK

Rds On (Max) @ Id, Vgs :

200mOhm @ 4.6A, 10V

Vgs (Max) :

±20V

Qualification Status :

COMMERCIAL

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

3.8W (Ta), 45W (Tc)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100 V

Reach Compliance Code :

Unknown

Number of Terminals :

2

Number of Elements :

1

Avalanche Energy Rating (Eas) :

113 mJ

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Operating Temperature :

-55°C ~ 175°C (TJ)

Operating Mode :

ENHANCEMENT MODE

Series :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On, Min Rds On) :

10V