IRFW540ATM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

28A

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

110A

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.052Ohm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

523 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

52m Ω @ 14A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.8W Ta 107W Tc

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Vgs (Max) :

±20V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.71pF @ 25V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

28A Tc

JESD-609 Code :

e3

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Case Connection :

DRAIN