IRFIZ48VPBF
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- Mfr.Part #
- IRFIZ48VPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 39A TO220AB FP
- Stock
- 1,819
- In Stock ：
- 1,819
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 39A
- Turn On Delay Time :
- 7.6 ns
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- Mounting Type :
- Through Hole
- Height :
- 9.8mm
- Radiation Hardening :
- No
- Published :
- 2003
- Input Capacitance (Ciss) (Max) @ Vds :
- 1985pF @ 25V
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 60V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Length :
- 10.6172mm
- Turn-Off Delay Time :
- 157 ns
- Package / Case :
- TO-220-3 Full Pack
- Continuous Drain Current (ID) :
- 39A
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4.826mm
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 43W Tc
- Power Dissipation :
- 43W
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 166 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Rise Time :
- 200ns
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 43A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- IRFIZ48VPBF
N-Channel Tube 12m Ω @ 43A, 10V ±20V 1985pF @ 25V 110nC @ 10V TO-220-3 Full Pack
IRFIZ48VPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1985pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 39A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 157 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
IRFIZ48VPBF Features
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 157 ns
a threshold voltage of 4V
IRFIZ48VPBF Applications
There are a lot of Infineon Technologies
IRFIZ48VPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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