IRFIZ48NPBF
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- Mfr.Part #
- IRFIZ48NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 40A TO220AB FP
- Stock
- 14,465
- In Stock ：
- 14,465
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 78ns
- Fall Time (Typ) :
- 48 ns
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 42W
- Length :
- 10.6172mm
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 11 ns
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 32 ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Width :
- 4.826mm
- Continuous Drain Current (ID) :
- 36A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- Power Dissipation-Max :
- 54W Tc
- Height :
- 9.8mm
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Voltage - Rated DC :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 40A
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- FET Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Recovery Time :
- 140 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Series :
- HEXFET®
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 4 V
- Current Rating :
- 36A
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 22A, 10V
- Published :
- 1996
- Datasheets
- IRFIZ48NPBF
N-Channel Tube 16m Ω @ 22A, 10V ±20V 1900pF @ 25V 89nC @ 10V TO-220-3 Full Pack
IRFIZ48NPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 270 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.There is no drain current on this device since the maximum continuous current it can conduct is 40A.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFIZ48NPBF Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 32 ns
IRFIZ48NPBF Applications
There are a lot of Infineon Technologies
IRFIZ48NPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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