IRFIZ46N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Power Dissipation-Max :

45W Tc

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

230 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Additional Feature :

High Reliability

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain Current-Max (Abs) (ID) :

33A

Pulsed Drain Current-Max (IDM) :

180A

Transistor Application :

SWITCHING

Published :

1997

Drain-source On Resistance-Max :

0.02Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Rds On (Max) @ Id, Vgs :

20m Ω @ 19A, 10V

FET Type :

N-Channel