IRFIZ34NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Height :

9.8mm

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

40m Ω @ 11A, 10V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

31 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Width :

4.826mm

Power Dissipation-Max :

37W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2003

Case Connection :

Isolated

Packaging :

Tube

Element Configuration :

Single

Continuous Drain Current (ID) :

21A

Number of Pins :

3

Recovery Time :

86 ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation :

31W

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Termination :

Through Hole

Package / Case :

TO-220-3 Full Pack

Dual Supply Voltage :

55V

Series :

HEXFET®

Drain to Source Breakdown Voltage :

55V

Radiation Hardening :

No

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rise Time :

49ns

Isolation Voltage :

2.5kV

Current Rating :

20A

Drain-source On Resistance-Max :

0.04Ohm

Nominal Vgs :

20 V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

40 ns

Length :

10.6172mm

Threshold Voltage :

4V

Lead Free :

Lead Free

Turn On Delay Time :

7 ns

Factory Lead Time :

12 Weeks