IRFIZ34GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Elements :

1

Number of Terminations :

3

Fall Time (Typ) :

52 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Turn-Off Delay Time :

29 ns

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Lead Free :

Lead Free

Resistance :

50mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Mounting Type :

Through Hole

Turn On Delay Time :

13 ns

Published :

2011

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

20A

DS Breakdown Voltage-Min :

60V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

42W Tc

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

80A

Element Configuration :

Single

Width :

4.83mm

Height :

9.8mm

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Radiation Hardening :

No

Power Dissipation :

42W

Vgs (Max) :

±20V

Mount :

Through Hole

Transistor Element Material :

SILICON

Length :

10.63mm

Rds On (Max) @ Id, Vgs :

50m Ω @ 12A, 10V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

100ns

Factory Lead Time :

8 Weeks

Threshold Voltage :

4V

Weight :

6.000006g

Number of Pins :

3