IRFIZ34E
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- Mfr.Part #
- IRFIZ34E
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 21A TO220AB FP
- Stock
- 30,594
- In Stock ：
- 30,594
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.042Ohm
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 1997
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 21A
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 37W Tc
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Pulsed Drain Current-Max (IDM) :
- 100A
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 60V
- Series :
- HEXFET®
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- DS Breakdown Voltage-Min :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 11A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Datasheets
- IRFIZ34E
N-Channel Tube 42m Ω @ 11A, 10V ±20V 700pF @ 25V 34nC @ 10V 60V TO-220-3 Full Pack
IRFIZ34E Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 110 mJ.A device's maximum input capacitance is 700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 21A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFIZ34E Features
the avalanche energy rating (Eas) is 110 mJ
based on its rated peak drain current 100A.
a 60V drain to source voltage (Vdss)
IRFIZ34E Applications
There are a lot of Infineon Technologies
IRFIZ34E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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