IRFIZ24NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Radiation Hardening :

No

Height :

9.8mm

Length :

10.6172mm

Additional Feature :

High Reliability

Voltage - Rated DC :

55V

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Resistance :

70mOhm

Current Rating :

14A

Power Dissipation-Max :

29W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Turn-Off Delay Time :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Pins :

3

Drain to Source Breakdown Voltage :

55V

Recovery Time :

83 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Width :

4.05mm

Lead Free :

Lead Free

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

68A

REACH SVHC :

No SVHC

Number of Elements :

1

Continuous Drain Current (ID) :

14A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

27 ns

Rise Time :

34ns

Series :

HEXFET®

Dual Supply Voltage :

55V

Element Configuration :

Single

Published :

1997

Turn On Delay Time :

4.9 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

26W

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

70m Ω @ 7.8A, 10V

JEDEC-95 Code :

TO-220AB

Packaging :

Tube