IRFIZ24EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

14A

Max Operating Temperature :

175°C

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

19 ns

Power Dissipation-Max :

29W Tc

Packaging :

Tube

Input Capacitance :

370pF

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Rise Time :

34ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Mounting Type :

Through Hole

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

Drain to Source Resistance :

71mOhm

Power Dissipation :

29W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

71mOhm @ 7.8A, 10V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Rds On Max :

71 mΩ

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Voltage - Rated DC :

60V

Published :

2004

Package / Case :

TO-220-3 Full Pack

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-220AB Full-Pak

Fall Time (Typ) :

27 ns

Current Rating :

14A