IRFIZ24E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

71 mJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

29W Tc

Number of Elements :

1

Surface Mount :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Drain-source On Resistance-Max :

0.071Ohm

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Tube

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Additional Feature :

High Reliability

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

14A

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

68A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

71m Ω @ 7.8A, 10V

Terminal Position :

Single