IRFIBF20GPBF
- Mfr.Part #
- IRFIBF20GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.2A TO220-3
- Stock
- 21,509
- In Stock :
- 21,509
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Fall Time (Typ) :
- 32 ns
- Number of Pins :
- 3
- Turn On Delay Time :
- 8 ns
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 4 V
- Height :
- 9.8mm
- REACH SVHC :
- Unknown
- Drain to Source Voltage (Vdss) :
- 900V
- Packaging :
- Tube
- Input Capacitance :
- 490pF
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Resistance :
- 8Ohm
- Width :
- 4.83mm
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 30W
- Element Configuration :
- Single
- Length :
- 10.63mm
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.000006g
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Supplier Device Package :
- TO-220-3
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 56 ns
- Rds On Max :
- 8 Ω
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 1.2A
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 8Ohm @ 720mA, 10V
- Drain to Source Resistance :
- 8Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 1.2A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Rise Time :
- 21ns
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Power Dissipation-Max :
- 30W Tc
- Published :
- 2016
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFIBF20GPBF

N-Channel Tube 8Ohm @ 720mA, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-220-3 Full Pack, Isolated Tab
IRFIBF20GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 490pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 8Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFIBF20GPBF Features
a continuous drain current (ID) of 1.2A
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)
IRFIBF20GPBF Applications
There are a lot of Vishay Siliconix
IRFIBF20GPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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