IRFIBF20G

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Mfr.Part #
IRFIBF20G
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 900V 1.2A TO220-3
Stock
4,426
In Stock :
4,426

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.63mm
Vgs (Max) :
±20V
Supplier Device Package :
TO-220-3
Current - Continuous Drain (Id) @ 25°C :
1.2A Tc
Published :
2014
Rise Time :
21ns
Max Operating Temperature :
150°C
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
6.000006g
Rds On (Max) @ Id, Vgs :
8Ohm @ 720mA, 10V
Radiation Hardening :
No
Min Operating Temperature :
-55°C
FET Type :
N-Channel
Number of Pins :
3
Drain to Source Breakdown Voltage :
900V
Turn-Off Delay Time :
56 ns
Turn On Delay Time :
8 ns
Width :
4.83mm
Rds On Max :
8 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
Non-RoHS Compliant
Drain to Source Voltage (Vdss) :
900V
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Height :
9.8mm
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Drain to Source Resistance :
8Ohm
Power Dissipation-Max :
30W Tc
Mounting Type :
Through Hole
Element Configuration :
Single
Packaging :
Tube
Continuous Drain Current (ID) :
1.2A
Number of Channels :
1
Mount :
Through Hole
Input Capacitance :
490pF
Fall Time (Typ) :
32 ns
Datasheets
IRFIBF20G
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFIBF20G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3 Full Pack, Isolated Tab, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, IRFIBF20G pinout, IRFIBF20G datasheet PDF, IRFIBF20G amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFIBF20G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFIBF20G


N-Channel Tube 8Ohm @ 720mA, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-220-3 Full Pack, Isolated Tab

IRFIBF20G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 490pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.2A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 8Ohm.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFIBF20G Features


a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a 900V drain to source voltage (Vdss)


IRFIBF20G Applications


There are a lot of Vishay Siliconix
IRFIBF20G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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