IRFIBE30G
- Mfr.Part #
- IRFIBE30G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.1A TO220-3
- Stock
- 6,030
- In Stock :
- 6,030
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation-Max :
- 35W Tc
- Drain to Source Resistance :
- 3Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 30 ns
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 800V
- Input Capacitance :
- 1.3nF
- Packaging :
- Tube
- Height :
- 9.8mm
- Drain to Source Voltage (Vdss) :
- 800V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.3A, 10V
- Length :
- 10.63mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 6.000006g
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220-3
- Mounting Type :
- Through Hole
- Published :
- 2016
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 2.1A
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 82 ns
- FET Type :
- N-Channel
- Rise Time :
- 33ns
- Max Operating Temperature :
- 150°C
- Lead Free :
- Contains Lead
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Width :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 12 ns
- Number of Pins :
- 3
- Rds On Max :
- 3 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Current Rating :
- 2.1A
- Datasheets
- IRFIBE30G

N-Channel Tube 3Ohm @ 1.3A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab
IRFIBE30G Overview
A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFIBE30G Features
a continuous drain current (ID) of 2.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFIBE30G Applications
There are a lot of Vishay Siliconix
IRFIBE30G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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