IRFIBE30G

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Mfr.Part #
IRFIBE30G
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 800V 2.1A TO220-3
Stock
6,030
In Stock :
6,030

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
RoHS Status :
Non-RoHS Compliant
Power Dissipation-Max :
35W Tc
Drain to Source Resistance :
3Ohm
Current - Continuous Drain (Id) @ 25°C :
2.1A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
30 ns
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
800V
Input Capacitance :
1.3nF
Packaging :
Tube
Height :
9.8mm
Drain to Source Voltage (Vdss) :
800V
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Rds On (Max) @ Id, Vgs :
3Ohm @ 1.3A, 10V
Length :
10.63mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Weight :
6.000006g
Mount :
Through Hole
Supplier Device Package :
TO-220-3
Mounting Type :
Through Hole
Published :
2016
Number of Channels :
1
Continuous Drain Current (ID) :
2.1A
Min Operating Temperature :
-55°C
Turn-Off Delay Time :
82 ns
FET Type :
N-Channel
Rise Time :
33ns
Max Operating Temperature :
150°C
Lead Free :
Contains Lead
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Width :
4.83mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
12 ns
Number of Pins :
3
Rds On Max :
3 Ω
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Radiation Hardening :
No
Element Configuration :
Single
Current Rating :
2.1A
Datasheets
IRFIBE30G
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFIBE30G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-220-3 Full Pack, Isolated Tab, Number of Pins:3, IRFIBE30G pinout, IRFIBE30G datasheet PDF, IRFIBE30G amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFIBE30G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFIBE30G


N-Channel Tube 3Ohm @ 1.3A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab

IRFIBE30G Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFIBE30G Features


a continuous drain current (ID) of 2.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)


IRFIBE30G Applications


There are a lot of Vishay Siliconix
IRFIBE30G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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