IRFIBC40GLCPBF
- Mfr.Part #
- IRFIBC40GLCPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.5A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.83mm
- Published :
- 2016
- Element Configuration :
- Single
- Input Capacitance :
- 1.1nF
- Fall Time (Typ) :
- 17 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Continuous Drain Current (ID) :
- 3.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- TO-220-3
- Vgs (Max) :
- ±20V
- Rds On Max :
- 1.2 Ω
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 1.2Ohm
- Height :
- 9.8mm
- Power Dissipation-Max :
- 40W Tc
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation :
- 40W
- Factory Lead Time :
- 8 Weeks
- Weight :
- 6.000006g
- Length :
- 10.63mm
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 27 ns
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 20ns
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Turn On Delay Time :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2.1A, 10V
- Datasheets
- IRFIBC40GLCPBF

N-Channel Tube 1.2Ohm @ 2.1A, 10V ±20V 1100pF @ 25V 39nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IRFIBC40GLCPBF Overview
The maximum input capacitance of this device is 1100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.5A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 27 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFIBC40GLCPBF Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFIBC40GLCPBF Applications
There are a lot of Vishay Siliconix
IRFIBC40GLCPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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