IRFIBC40GLC
- Mfr.Part #
- IRFIBC40GLC
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.5A TO220-3
- Stock
- 29,711
- In Stock :
- 29,711
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation-Max :
- 40W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.6mm
- Published :
- 2017
- Fall Time (Typ) :
- 17 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Rise Time :
- 20ns
- Packaging :
- Tube
- Rds On Max :
- 1.2 Ω
- Turn-Off Delay Time :
- 27 ns
- Vgs (Max) :
- ±20V
- Current Rating :
- 4A
- Min Operating Temperature :
- -55°C
- Weight :
- 6.000006g
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2.1A, 10V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Channels :
- 1
- Supplier Device Package :
- TO-220-3
- Lead Free :
- Contains Lead
- Width :
- 4.8mm
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 3.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Drain to Source Resistance :
- 1.2Ohm
- Voltage - Rated DC :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 1.1nF
- Height :
- 9.8mm
- Turn On Delay Time :
- 12 ns
- Datasheets
- IRFIBC40GLC

N-Channel Tube 1.2Ohm @ 2.1A, 10V ±20V 1100pF @ 25V 39nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IRFIBC40GLC Overview
A device's maximal input capacitance is 1100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFIBC40GLC Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFIBC40GLC Applications
There are a lot of Vishay Siliconix
IRFIBC40GLC applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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