IRFIBC20GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.83mm

Mount :

Through Hole

Continuous Drain Current (ID) :

1.7A

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

6.8A

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Turn On Delay Time :

10 ns

JESD-609 Code :

e3

Vgs (Max) :

±20V

Rise Time :

23ns

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Threshold Voltage :

2V

Fall Time (Typ) :

25 ns

Turn-Off Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Published :

2014

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Height :

9.8mm

Pin Count :

3

Power Dissipation-Max :

30W Tc

REACH SVHC :

Unknown

Length :

10.63mm

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 1A, 10V

Number of Channels :

1

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

84 mJ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Weight :

6.000006g

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

30W

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant