IRFIBC20G
- Mfr.Part #
- IRFIBC20G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1.7A TO220-3
- Stock
- 59,830
- In Stock :
- 59,830
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 1.7A
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Input Capacitance :
- 350pF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 9.8mm
- Rise Time :
- 23ns
- Turn-Off Delay Time :
- 30 ns
- Voltage - Rated DC :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Drain to Source Resistance :
- 4.4Ohm
- Rds On Max :
- 4.4 Ω
- Published :
- 2016
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Supplier Device Package :
- TO-220-3
- Width :
- 4.83mm
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Min Operating Temperature :
- -55°C
- Length :
- 10.63mm
- Continuous Drain Current (ID) :
- 1.7A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 6.000006g
- Power Dissipation-Max :
- 30W Tc
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Turn On Delay Time :
- 10 ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1A, 10V
- Fall Time (Typ) :
- 25 ns
- RoHS Status :
- Non-RoHS Compliant
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- IRFIBC20G

N-Channel Tube 4.4Ohm @ 1A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IRFIBC20G Overview
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.7A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 4.4Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFIBC20G Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)
IRFIBC20G Applications
There are a lot of Vishay Siliconix
IRFIBC20G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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