IRFIB8N50KPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

27A

Turn-Off Delay Time :

28 ns

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Number of Terminations :

3

Weight :

6.000006g

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

16ns

Pin Count :

3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

4.83mm

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

290 mJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Number of Channels :

1

Published :

2004

Number of Pins :

3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Threshold Voltage :

5V

Height :

9.8mm

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Power Dissipation-Max :

45W Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

350m Ω @ 4A, 10V

Vgs (Max) :

±30V

Length :

10.63mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6.7A

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 25V

Number of Elements :

1

Turn On Delay Time :

17 ns

Fall Time (Typ) :

8.4 ns

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V