IRFIB8N50K

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Published :

2004

Element Configuration :

Single

Rise Time :

16ns

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

350m Ω @ 4A, 10V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

27A

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

45W

Voltage - Rated DC :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Current Rating :

6.7A

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Fall Time (Typ) :

8.4 ns

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 25V

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Turn-Off Delay Time :

28 ns

Continuous Drain Current (ID) :

6.7A

Avalanche Energy Rating (Eas) :

290 mJ

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

JESD-609 Code :

e0

Number of Elements :

1

Number of Pins :

3

Vgs (Max) :

±30V

Power Dissipation-Max :

45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)