IRFIB7N50LPBF
- Mfr.Part #
- IRFIB7N50LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6.8A TO220-3
- Stock
- 18,717
- In Stock :
- 18,717
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.000006g
- Turn On Delay Time :
- 23 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 36ns
- Turn-Off Delay Time :
- 47 ns
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Tc
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2220pF @ 25V
- Input Capacitance :
- 2.22nF
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Width :
- 4.83mm
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- TO-220-3
- Rds On Max :
- 380 mΩ
- Length :
- 10.63mm
- Drain to Source Breakdown Voltage :
- 500V
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 19 ns
- Power Dissipation-Max :
- 46W Tc
- Rds On (Max) @ Id, Vgs :
- 380mOhm @ 4.1A, 10V
- Height :
- 9.8mm
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Published :
- 2009
- Number of Pins :
- 3
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 6.8A
- Drain to Source Resistance :
- 380mOhm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFIB7N50LPBF

N-Channel Tube 380mOhm @ 4.1A, 10V ±30V 2220pF @ 25V 92nC @ 10V 500V TO-220-3 Full Pack, Isolated Tab
IRFIB7N50LPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2220pF @ 25V.This device has a continuous drain current (ID) of [6.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 47 ns.MOSFETs have 380mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFIB7N50LPBF Features
a continuous drain current (ID) of 6.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 47 ns
single MOSFETs transistor is 380mOhm
a 500V drain to source voltage (Vdss)
IRFIB7N50LPBF Applications
There are a lot of Vishay Siliconix
IRFIB7N50LPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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