IRFIB7N50A
- Mfr.Part #
- IRFIB7N50A
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6.6A TO220-3
- Stock
- 10,122
- In Stock :
- 10,122
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 14 ns
- Current Rating :
- 6.6A
- Power Dissipation-Max :
- 60W Tc
- Weight :
- 6.000006g
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.63mm
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 520 mΩ
- Drain to Source Resistance :
- 520mOhm
- Width :
- 4.83mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 520mOhm @ 4A, 10V
- Vgs (Max) :
- ±30V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 32 ns
- Drain to Source Breakdown Voltage :
- 500V
- Supplier Device Package :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Input Capacitance :
- 1.423nF
- Published :
- 2016
- Rise Time :
- 35ns
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1423pF @ 25V
- Continuous Drain Current (ID) :
- 6.6A
- Voltage - Rated DC :
- 500V
- Fall Time (Typ) :
- 28 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 6.6A Tc
- Height :
- 9.8mm
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Drain to Source Voltage (Vdss) :
- 500V
- Mount :
- Through Hole
- Power Dissipation :
- 60W
- Datasheets
- IRFIB7N50A

N-Channel Tube 520mOhm @ 4A, 10V ±30V 1423pF @ 25V 52nC @ 10V 500V TO-220-3 Full Pack, Isolated Tab
IRFIB7N50A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1423pF @ 25V.This device has a continuous drain current (ID) of [6.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.MOSFETs have 520mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFIB7N50A Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 520mOhm
a 500V drain to source voltage (Vdss)
IRFIB7N50A Applications
There are a lot of Vishay Siliconix
IRFIB7N50A applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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