IRFIB6N60A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.4nF

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Weight :

6.000006g

Vgs (Max) :

±30V

Radiation Hardening :

No

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

RoHS Status :

Non-RoHS Compliant

Turn On Delay Time :

13 ns

Length :

10.63mm

Rise Time :

25ns

Fall Time (Typ) :

22 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

750mOhm @ 3.3A, 10V

Rds On Max :

750 mΩ

Number of Channels :

1

Turn-Off Delay Time :

30 ns

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-220-3

Width :

4.83mm

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Height :

9.8mm

Power Dissipation-Max :

60W Tc

Continuous Drain Current (ID) :

5.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Min Operating Temperature :

-55°C

Number of Pins :

3

FET Type :

N-Channel

Drain to Source Resistance :

750mOhm