IRFIB5N65APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

60W Tc

Rds On Max :

930 mΩ

Turn On Delay Time :

14 ns

Weight :

6.000006g

Drain to Source Resistance :

930mOhm

Factory Lead Time :

8 Weeks

Height :

9.8mm

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Continuous Drain Current (ID) :

5.1A

Supplier Device Package :

TO-220-3

Length :

10.63mm

Input Capacitance :

1.417nF

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1417pF @ 25V

Mounting Type :

Through Hole

Turn-Off Delay Time :

34 ns

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Rise Time :

20ns

Vgs (Max) :

±30V

Width :

4.83mm

Number of Channels :

1

Max Operating Temperature :

150°C

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Threshold Voltage :

4V

Fall Time (Typ) :

18 ns

Packaging :

Tube

Power Dissipation :

60W

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

930mOhm @ 3.1A, 10V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Radiation Hardening :

No